transistor (npn) features ? high breakdown voltage ? complements t he 2sa1579 m aximum r atings (t a =25 unless otherwise noted ) symbol parameter value unit v cbo collector - base voltage 120 v v ceo collector - emitter voltage 120 v v ebo emitter - base voltage 5 v i c collector current 50 m a p c collector power dissipation 200 m w r ja thermal resistance from j u nction to a mbient 625 /w t j junction temperature 150 t stg storage temperature - 55 + 150 electrical characteristics ( t a =25 unless otherwise specified) p arameter symbol test conditions m in t yp m ax u nit collector - base breakdown voltage v (br) cbo i c = 50 a , i e =0 120 v collector - emitter breakdown voltage v (br) c e o i c = 1 ma, i b =0 120 v emitter - base breakdown voltage v (br)eb o i e = 5 0 a , i c =0 5 v collector cut - off current i cbo v cb = 100 v, i e =0 5 00 n a emitter cut - off current i ebo v eb = 4 v, i c =0 5 00 n a dc current gain h fe v ce = 6 v, i c = 2 ma 180 560 collector - emitter saturation voltage v ce(sat) i c = 1 0m a, i b = 1 ma 0. 5 v transition frequency f t v ce = 12 v,i c = 2 ma , f= 1 00 mhz 140 m hz collector output capacitance c ob v cb = 12 v, i e =0, f=1mhz 2.5 pf classification of h fe rank r s range 180 C 390 270 C 560 marking tr ts so t C 3 23 1. base 2. emitter 3. collector 2 s c 4102 1 www.htsemi.com semiconductor jinyu
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